This lawsuits includes papers provided on the Electronics in severe Environments, foreign gasoline Cells and comparable platforms, and complicated Dielectrics for instant Communications symposia.
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Additional resources for Advances in Electronic and Electrochemical Ceramics, Volume 179
Once samples containing a majority of crystalline phase were formed, dielectric property measurements were taken. Figure 2 shows the effect that composition has on the dielectric constant and Curie temperature. The BST 50/50 sample in figure 2a, shows that the peak dielectric constant is around 250 and occurs at -90 °C, while the BST 80/20 has a peak dielectric constant of 1000 at 80 °C. This sampling of data shows that as more SrO is added the Curie temperature and dielectric constant decreases.
Pan, M. Lanagan, B. A. -T. Cheng, "High Energy Density Ferroelectric Glass-Ceramics," pp. 187-194 in Ceramic Transactions, Vol. 169, Synthesis, Properties, and Crystal Chemistry ofPerovskite-Based Material, edited by A. Goyal, American Ceramic Society, Westerville, OH, 2005. H. D. W. Ricketts, "Optimization of Energy Storage Density in Ceramic Capacitors,"/ Phys. D: Appl. , 29 253-258 (1996). n - A. D. Stookey, French Patent, 1272036 (1961). 13 A. Herczog, " Microcrystalline BaTi03 by Crystallization from Glass,"/.
7 V. Dimitrova, D. Manova, and E. Valcheva. " Mater. Sei. Eng. B 68,1-4(1999). J. Schulte and G. Sobe. " Thin Solid Films, 324 (1998): 19-24. N. Cheng. " Thin Solid Films, 358, 215-22 (2000). 54 Advances in Electronic and Electrochemical Ceramics K. Jagannadham, K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan. " J. Vac. Sei. Technol. A 16, 2804-15 (1998). T. W. Ong. "Nearly amorphous to epitxial growth of aluminum nitride films," Diamond Rel. Mater. 13, 1603-8 (2004). 12 F. Engelmark, J. F. V.